features trenchfet power mosfet 175 c junction temperature optimized for low-side synchronous rectifier operation new package with low thermal resistance 100% r g tested applications dc/dc converters synchronous rectifier SUM110N03-04P vishay siliconix new product document number: 72366 s-32523?rev. b, 08-dec-03 www.vishay.com 1 n-channel 30-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 30 0.0042 @ v gs = 10 v 110 30 0.0065 @ v gs = 4.5 v 77 d g s n-channel mosfet to-263 s d g top view ordering information: SUM110N03-04P SUM110N03-04P-e3 (lead free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 110 continuous drain current (t j = 175 c) t c = 100 c i d 88 a pulsed drain current i dm 300 a avalanche current i ar 55 repetitive a valanche energy a l = 0.1 mh e ar 151 mj maximum power dissipation a t c = 25 c p d 120 b w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case r thjc 1.25 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM110N03-04P vishay siliconix new product www.vishay.com 2 document number: 72366 s-32523?rev. b, 08-dec-03 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 30 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 20 a 0.0033 0.0042 drain source on state resistance a r v gs = 10 v, i d = 20 a, t j = 125 c 0.0063 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a, t j = 175 c 0.0076 v gs = 4.5 v, i d = 20 a 0.0052 0.0065 forward transconductance a g fs v ds = 15 v, i d = 20 a 20 s dynamic b input capacitance c iss 5100 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 860 pf reverse transfer capacitance c rss 430 gate-resistance r g 0.5 1.0 1.7 total gate charge b q g 40 60 gate-source charge b q gs v ds = 15 v, v gs = 4.5 v, i d = 50 a 18 nc gate-drain charge b q gd ds , gs , d 16 turn-on delay time b t d(on) 12 20 rise time b t r v dd = 15 v, r l = 0.3 12 20 ns turn-off delay time b t d(off) v dd = 15 v , r l = 0 . 3 i d 50 a, v gen = 10 v, r g = 2.5 40 60 ns fall time b t f 10 15 source-drain diode ratings and characteristics (t c = 25 c) c continuous current i s 100 a pulsed current i sm 300 a forward voltage a v sd i f = 30 a, v gs = 0 v 1.2 1.5 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 40 80 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. independent of operating temperature. c. guaranteed by design, not subject to production testing.
SUM110N03-04P vishay siliconix new product document number: 72366 s-32523?rev. b, 08-dec-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 6 12 18 24 30 0 2 4 6 8 10 0 20406080100 0 30 60 90 120 150 180 0 20406080100 0.000 0.002 0.004 0.006 0.008 0.010 0 20406080100 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c t c = 125 c v ds = 15 v i d = 50 a v gs = 10 thru 5 v v gs = 10 v c rss t c = ? 55 c 25 c 125 c v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) c iss c oss 4 v 2 v 3 v
SUM110N03-04P vishay siliconix new product www.vishay.com 4 document number: 72366 s-32523?rev. b, 08-dec-03 typical characteristics (25 c unless noted) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0 30 32 34 36 38 40 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) v (br)dss (v) i d = 1.0 ma drain-source vo ltage breakdown vs. junction t emperature
SUM110N03-04P vishay siliconix new product document number: 72366 s-32523?rev. b, 08-dec-03 www.vishay.com 5 thermal ratings 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 safe operating area, junction-to-case v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.1 100 maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 1 ms ? drain current (a) i d 1 t c = 25 c single pulse 10 ms dc, 100 ms 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 duty cycle = 0.5 0.2 0.1 0.05 single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.02 10 s 100 s limited by r ds(on)
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